? by semikron 0898 1 absolute maximum ratings values symbol conditions 1) units v ces v cgr i c i cm v ges p tot t j , (t stg ) v isol humidity climate r ge = 20 k w t case = 25/70 c t case = 25/70 c; t p = 1 ms per igbt, t case = 25 c ac, 1 min. din 40040 din iec 68 t.1 1200 1200 190 / 145 380 / 290 20 800 C40 ... + 150 (125) 2 500 class f 40/125/56 v v a a v w c v inverse diode i f = Ci c i fm = Ci cm i fsm i 2 t t case = 25/80 c t case = 25/80 c; t p = 1 ms t p = 10 ms; sin.; t j = 150 c t p = 10 ms; t j = 150 c 130 / 90 380 / 290 1100 6000 a a a a 2 s characteristics symbol conditions 1) min. typ. max. units v (br)ces v ge(th) i ces i ges v cesat v cesat g fs v ge = 0, i c = 4 ma v ge = v ce , i c = 4 ma v ge = 0 t j = 25 c v ce = v ces t j = 125 c v ge = 20 v, v ce = 0 i c = 100 a v ge = 15 v; i c = 150 a t j = 25 (125) c v ce = 20 v, i c = 100 a 3 v ces 4,5 C C C C C 54 C 5,5 0,2 9 C 2,1(2,4) 2,6(3,1) C C 6,5 2 C 1 2,45(2,85) C C v v ma ma m a v v s c chc c ies c oes c res l ce per igbt v ge = 0 v ce = 25 v f = 1 mhz C C C C C C 6,5 1000 500 C 350 8,5 1500 600 30 pf nf pf pf nh t d(on) t r t d(off) t f e on 5) e off 5) v cc = 600 v v ge = C15 v / +15 v 3) i c = 100 a, ind. load r gon = r goff = 8 w t j = 125 c C C C C C C 110 50 470 60 14 13 C C C C C C ns ns ns ns mws mws inverse diode 8) v f = v ec v f = v ec v to r t i rrm q rr i f = 100 a v ge = 0 v; i f = 150 a t j = 25 (125) c t j = 125 c t j = 125 c i f = 100 a; t j = 125 c 2) i f = 100 a; t j = 125 c 2) C C C C C C 2,0(1,8) 2,25(2,1) 1,1 C 52 12 2,5 C 1,2 11 C C v v v m w a m c thermal characteristics r thjc r thjc r thch per igbt per diode per module C C C C C C 0,15 0,30 0,05 c/w c/w c/w semitrans ? m low loss igbt modules skm 145 gb 124 d features ? mos input (volta g e controlled) ? n channel, homo g eneous silicon structure (npt- non punch- throu g h igbt) ? low loss hi g h density chip ? low tail current ? hi g h short circuit capability, self limitin g to 6 * i cnom ? latch-up free ? fast & soft inverse cal diodes 8) ? isolated copper baseplate usin g dcb direct copper bondin g technolo g y without hard mould ? lar g e clearance (10 mm) and creepa g e distances (20 mm) typical applications: ? page 5 ? switchin g (not for linear use) 1) t case = 25 c, unless otherwise specified 2) i f = C i c , v r = 600 v, Cdi f /dt = 1000 a/ m s, v ge = 0 v 3) use v geoff = C5... C15 v 5) see fi g . 2 + 3; r goff = 6,8 w 8) cal = controlled axial lifetime technolo g y cases and mech. data ? page 6 gb semitrans 2 i:\marketin\framedat\datbl\b06-igbt\145gb124d_1.fm
? by semikron b 6 C 132 skm 145 gb 124 d 0898 m145g124.xls-6 0 2 4 6 8 10 12 0 200 400 600 800 1000 1200 1400 v ce v i csc /i c allowed numbers of short circuits: <1000 time between short circuits: >1s di/dt=300 a/s 900 a/s 1500 a/s m145g124.xls-5 0 0,5 1 1,5 2 2,5 0 200 400 600 800 1000 1200 1400 v ce v i cpuls /i c m145g124.xls-4 0,1 1 10 100 1000 1 10 100 1000 10000 v ce v i c a t p =16s 100s 1ms 10ms m145g124.xls-3 0 10 20 30 40 0 102030405060 r g w e mws e on e off m145g124.xls-2 0 10 20 30 40 0 50 100 150 200 250 i c a e mws e on e off m145g124.xls-1 0 100 200 300 400 500 600 700 800 900 0 20 40 60 80 100 120 140 160 t c c p tot w fig. 3 turn-on /-off energy = f (r g ) fig. 4 maximum safe operating area (soa) i c = f (v ce ) fig. 1 rated power dissipation p tot = f (t c ) fig. 2 turn-on /-off energy = f (i c ) fig. 5 turn-off safe operating area (rbsoa) fig. 6 safe operating area at short circuit i c = f (v ce ) t j = 125 c v ce = 600 v v ge = + 15 v r g = 8 w 1 pulse t c = 25 c t j 150 c t j = 125 c v ce = 600 v v ge = + 15 v i c = 100 a t j 150 c v ge = 15 v t sc 10 s l < 25 nh i c = 100 a t j 150 c v ge = 15 v r goff = 8 w i c = 100 a not for linear use
? by semikron b 6 C 133 0898 m145g124.xls-12 0 50 100 150 200 02468101214 v g e v i c a m145g124.xls-10 0 50 100 150 200 012345 v ce v i c a 17v 15v 13v 11v 9v 7v m145g124.xls-9 0 50 100 150 200 012345 v ce v i c a 17v 15v 13v 11v 9v 7v m145g124.xls-8 0 40 80 120 160 200 0 20 40 60 80 100 120 140 160 t c c i c a p cond(t) = v cesat(t) i c(t) v cesat(t) = v ce(to)(tj) + r ce(tj) i c(t) v ce(to)(tj) 1,3 + 0,0005 (t j C25) [v] typ.: r ce(tj) = 0,008 + 0,000025 (t j C25) [ w ] max.: r ce(tj) = 0,012 + 0,000035 (t j C25) [ w ] valid for v ge = + 15 [v]; i c > 0,3 i cnom fig. 9 typ. output characteristic, t p = 80 s; 25 c fig. 10 typ. output characteristic, t p = 80 s; 125 c fig. 8 rated current vs. temperature i c = f (t c ) fig. 11 saturation characteristic (igbt) calculation elements and equations fig. 12 typ. transfer characteristic, t p = 80 s; v ce = 20 v t j = 150 c v ge 3 15v +2 C1
? by semikron b 6 C 134 skm 145 gb 124 d 0898 m145g124.xls-18 0 1 2 3 4 5 6 7 0 50 100 150 200 i f a e offd mj 30 w 10 w 60 w 6 w r g = 4 w m145g124.xls-17 0 50 100 150 200 01234 v f v i f a t j =125c, typ. t j =25c, typ. t j =125c, max. t j =25c, max. m145g124.xls-16 10 100 1000 10000 0204060 r g w t ns t doff t don t r t f m145g124.xls-15 10 100 1000 0 50 100 150 200 250 i c a t ns t doff t don t r t f m145g124.xls-14 0,1 1 10 100 0 102030 v ce v c nf c ies c oes c res m145g124.xls-13 0 2 4 6 8 10 12 14 16 18 20 0 100 200 300 400 500 q gate nc v ge v 600v 800v fig. 13 typ. gate charge characteristic fig. 14 typ. capacitances vs.v ce v ge = 0 v f = 1 mhz fig. 15 typ. switching times vs. i c fig. 16 typ. switching times vs. gate resistor r g fig. 17 typ. cal diode forward characteristic fig. 18 diode turn-off energy dissipation per pulse i cpuls = 100 a t j = 125 c v ce = 600 v v ge = 15 v r gon = 8 w r goff = 8 w induct. load t j = 125 c v ce = 600 v v ge = 15 v i c = 100 a induct. load v cc = 600 v t j = 125 c v ge = 15 v
? by semikron b 6 C 135 0898 m145g124.xls-24 0 5 10 15 20 25 0 1000 2000 3000 4000 5000 di f /dt a/s q rr c i f = 100 a 75 a 50 a 25 a 30 w 10 w 6 0 w 6 w r g = 4 w 150 a m145g124.xls-23 0 30 60 90 120 150 180 0 1000 2000 3000 4000 5000 di f /dt a/s i rr a 30 w 10 w 60 w 6 w r g = 4 w m145g124.xls-22 0 30 60 90 120 150 180 0 50 100 150 200 i f a i rr a 30 w 10 w 60 w 6 w r g = 4 w m145g124.xls-20 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 1 s z thjc k/w d=0,5 0,2 0,1 0,05 0,02 0,01 single pulse t p m145g124.xls-19 0,0001 0,001 0,01 0,1 1 0,00001 0,0001 0,001 0,01 0,1 1 t p s z thjc k/w d=0,50 0,20 0,10 0,05 0,02 0,01 single pulse fig. 19 transient thermal impedance of igbt z thjc = f (t p ); d = t p / t c = t p f fig. 20 transient thermal impedance of inverse cal diodes z thjc = f (t p ); d = t p / t c = t p f fig. 22 typ. cal diode peak reverse recovery current i rr = f (i f ; r g ) fig. 23 typ. cal diode peak reverse recovery current i rr = f (di/dt) fig. 24 typ. cal diode recovered charge q rr = f (di/dt) typical applications include switched mode power supplies dc servo and robot drives inverters dc choppers ac motor speed control ups uninterruptable power supplies general power switching applications v cc = 600 v t j = 125 c v ge = 15 v v cc = 600 v t j = 125 c v ge = 15 v v cc = 600 v t j = 125 c v ge = 15 v i f = 100 a
? by semikron b 6 C 136 skm 145 gb 124 d 0898 semitrans 2 case d 61 ul recognized file no. e 63 532 skm 145 gb 124 d dimensions in mm case outline and circuit diagram mechanical data symbol conditions values units min. typ. max. m 1 m 2 a w to heatsink, si units (m6) to heatsink, us units for terminals, si units (m5) for terminals, us units 3 27 2,5 22 C C C C C C C C 5 44 5 44 5x9,81 160 nm lb.in. nm lb.in. m/s 2 g this is an electrostatic discharge sensitive device (esds). please observe the international standard iec 747-1, chapter ix. eight devices are supplied in one semibox a without mounting hard- ware, which can be ordered separa- tely under ident no. 33321100 (for 10 semitrans 2) larger packing units of 20 or 42 pie- ces are used if suitable accessories ? b 6 C 4 semibox ? c C 1.
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